Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Abe, Shinichiro; Sato, Tatsuhiko; Matsuba, Hirotaka*; Watanabe, Yukinobu*
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.45 - 48, 2015/11
Secondary cosmic-rays have been recognized as a cause of soft errors for microelectronics in terrestrial environment. Recently, the contribution of terrestrial muons to soft errors is concerned for advanced microelectronics because it becomes small and sensitive to radiation. Muons generate energetic secondary through photonuclear interaction and negative muon capture. In the present work, we investigate the effect of these interactions on terrestrial muon-induced soft errors. The analysis of soft error rate (SER) in the 25-nm design rule NMOSFET is performed based on the multiple sensitive volume (MSV) model using PHITS. It is clarified that the terrestrial muon-induced SER is a few or less of neutron-induced SER and it is mainly caused though negative muon capture while the effect of muon photonuclear interaction is small. It is also found that direct ionization only affects soft errors with extremely low critical charge.
Kraus, H.; Simin, D.*; Fuchs, F.*; Onoda, Shinobu; Makino, Takahiro; Dyakonov, V.*; Oshima, Takeshi
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.176 - 179, 2015/11
Shibata, Yuichi*; Imaizumi, Mitsuru*; Sato, Shinichiro; Oshima, Takeshi; Ooka, Sachiyo*; Takamoto, Tatsuya*
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.65 - 68, 2015/11
Radiation response is one of the important properties for space solar cells. It should be well understood so as to accurately predict their degradation in orbit and also to improve their radiation tolerance. Recently, a phenomenon, recovery from the radiation degradation by light soaking, on inverted metamorphic (IMM) triple-junction (3J) solar cells was found out. In this work, the light soaking annealing effects on electron irradiated IMM 3J solar cells are reported. IMM 3J solar cells irradiated with 1 MeV electrons with the fluence of 3
10
e
/cm
showed the recovery of open-circuit voltage, Voc, up to 43 mV after light (AM0, 1 sun) soaking of 3 hours. The increment of the electroluminescence intensity for InGaP in the IMM 3J cells due to the light soaking suggests that the Voc recovery occurs in InGaP top-cell rather than GaAs middle-cell or InGaAs bottom-cell.
Nakamura, Tetsuya*; Imaizumi, Mitsuru*; Sato, Shinichiro; Sugaya, Takeyoshi*; Mochizuki, Toru*; Okano, Yoshinobu*; Oshima, Takeshi
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.73 - 76, 2015/11
The radiation effect on GaAs p-i-n solar cells with quantum dot (QD) in the i-layer was investigated. In a previous work, we particularly noted the degradation of fill-factor (FF) for the QD cells. In this work, to clarify the reason of the FF degradation in QD cells, generation current due to low-energy proton irradiation, which we call ion beam induced current (IBIC), was observed to characterize behavior of the generated minority carrier by the protons in the depletion region where QDs are located. The energy of protons was adjusted to damage the depletion region, and decrease of generation current was measured during the proton irradiation. The results suggest that the serious degradation of FF is caused by a decrease of the carrier collection efficiency in the depletion region due to proton damage.
Hijikata, Yasuto*; Mitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi*; Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; et al.
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.130 - 133, 2015/11
Takeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; et al.
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.134 - 137, 2015/11
Haruyama, Moriyoshi; Onoda, Shinobu; Kada, Wataru*; Teraji, Tokuyuki*; Isoya, Junichi*; Oshima, Takeshi; Hanaizumi, Osamu*
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.184 - 187, 2015/11